Below is sample metadata from a August 1997 article from 'Applied Physics Letters'. Some redundant material has been removed. The metadata for an article is placed in a separate SGML file and linked to the full-text SGML file.  There is a bibliographic citation section ('<uibibl>') with citation, author, author affiliation, abstract, INSPEC link, and the
full-text URL.  There is a bibliography section ('<uiblist>") which includes entries that contain the citation from the article's bibliography along with the individual author names, a link to the INSPEC database, and backward links to the Testbed for references which are continued in the Testbed.   There is a figure group section ('<uift>') that contains the
URLs of the for the article's figures along with the figure captions. And, there is a forward citation section ('<uiblistf>') that contains the citation and URL of articles in the Testbed hat cite this particular article.  These links are added to the metadata of earlier individual articles as the new articles are loaded into the Testbed.  In this way, the metadata for a specific article remains dynamic and is changed as new articles cite earlier articles.  

<uimeta>

<uiacnom>aip_apl_71_08_014734</uiacnom>
<uibibl>
<uiadisp>Wu, Warren, Tucker, John R., Solomon, Glenn S., et al., </uiadisp>
<uititlm>Atom-resolved scanning tunneling microscopy of vertically ordered
InAs quantum dots </uititlm>
<uisrcm>Applied Physics Letters</uisrcm>
<uivolm>71, no. 8</uivolm>
<uidatem>25 August 1997</uidatem>
<uipgm>1083 - 1085</uipgm>
<uicpyrtm>0003-6951/97/71(8)/1083/3/$10.00 copyright 1997 American
Institute of Physics</uicpyrtm>
<uiagrp><uinoa>4</uinoa>
<uiauthm><uiname> Wu, Warren </uiname><uiaff> Department of Electrical and
Computer Engineering and Beckman Institute, University of Illinois at
Urbana-Champaign, Urbana, Illinois 61801 </uiaff></uiauthm>
<uiauthm><uiname> Tucker, John R. </uiname><uiaff> Department of Electrical
and Computer Engineering and Beckman Institute, University of Illinois at
Urbana-Champaign, Urbana, Illinois 61801 </uiaff></uiauthm>
<uiauthm><uiname> Solomon, Glenn S. </uiname><uiaff> Solid State
Laboratories, Stanford University, Stanford, California 94305-4055
</uiaff></uiauthm>
<uiauthm><uiname> Harris, James S. </uiname><uiaff> Solid State
Laboratories, Stanford University, Stanford, California 94305-4055
</uiaff></uiauthm></uiagrp>
<uiabs>We present cross-sectional scanning tunneling microscopy (STM)
images of strain-induced, self-organized InAs quantum dots grown on GaAs.
Samples containing 5 and 10 sequentially grown dot layers are investigated,
and dots from different layers are seen to align in vertical columns. Our
STM images are in general agreement with previous structural imaging, such
as cross-sectional transmission electron microscopy, except that dot crowns
appear more truncated. Although the size of the dots in most columns is
roughly constant, monotonic changes in diameter are observed in some cases.
STM analysis also reveals many new atom-resolved details of electronic
structure, including dissolution of the InAs wetting layer and the presence
of indium between the dot columns, which we attribute to segregation and
diffusion of indium out of the wetting layer during overgrowth. copyright
1997 American Institute of Physics. [S0003-6951(97)01434-4] </uiabs>
<uiinsp>A=Wu&V=71&P=1083&Y=1997</uiinsp>
<uiurls>http://ushas.grainger.uiuc.edu/~aip/apl/71_08/014734/014734.sgm</uiu
rls>
<uiurlp>http://ushas.grainger.uiuc.edu/~aip/apl/71_08/014734/014734ap.pdf</u
iurlp>
</uibibl>
<uiblist><uinoc>13</uinoc>

<uicite><uicdisp>M. Tabuchi, S. Noda, and A. Sasaki, in Science and
Technology of Mesoscopic Structures, edited by S. Namba, C. Hamaguchi, and
T. Ando (Springer, Tokyo, 1992).</uicdisp><uicgrp><uiname> Tabuchi, M.
</uiname><uiname> Noda, S. </uiname><uiname> Sasaki, A. </uiname><uiname>
Namba, S. </uiname><uiname> Hamaguchi, C. </uiname><uiname> Ando, T.
</uiname></uicgrp></uicite>

<uicite><uicdisp>D. Leonard, M. Krishnamurthy, C. M. Reeves, S. P.
Denbaars, and P. M. Petroff, Appl. Phys. Lett. 63, 3203
(1993).</uicdisp><uicgrp><uiname> Leonard, D. </uiname><uiname>
Krishnamurthy, M. </uiname><uiname> Reeves, C. M. </uiname><uiname>
Denbaars, S. P. </uiname><uiname> Petroff, P. M.
</uiname></uicgrp><CODENM>APPLAB</CODENM><uicser>Appl. Phys.
Lett.</uicser><uicinsp>A=Leonard&V=63&P=3203&Y=1993</uicinsp></uicite>

<uicite><uicdisp>G. S. Solomon, J. A. Trezza, and J. S. Harris, Jr., Appl.
Phys. Lett. 66, 3161 (1995).</uicdisp><uicgrp><uiname> Solomon, G. S.
</uiname><uiname> Trezza, J. A. </uiname><uiname> Harris, J. S.
</uiname></uicgrp><CODENM>APPLAB</CODENM><uicser>Appl. Phys.
Lett.</uicser><uicinsp>A=Solomon&V=66&P=3161&Y=1995</uicinsp><uicurls>http:/
/ushas.grainger.uiuc.edu/~aip/apl/66_23/017523/017523.sgm</uicurls><uicurlp>
http://ushas.grainger.uiuc.edu/~aip/apl/66_23/017523/017523ap.pdf</uicurlp><
/uicite>

<uicite><uicdisp>Q. Xie, A. Madhukar, P. Chen, and N. P. Kobayashi, Phys.
Rev. Lett. 75, 2542 (1995).</uicdisp><uicgrp><uiname> Xie, Q.
</uiname><uiname> Madhukar, A. </uiname><uiname> Chen, P. </uiname><uiname>
Kobayashi, N. P. </uiname></uicgrp><CODENM>PRLTAO</CODENM><uicser>Phys.
Rev.
Lett.</uicser><uicinsp>A=Xie&V=75&P=2542&Y=1995</uicinsp><uicurls>http://dli
.grainger.uiuc.edu/~APS_PRL/75_13/LD5671/LD5671.sgm</uicurls><uicurlp>http:/
/dli.grainger.uiuc.edu/~APS_PRL/75_13/LD5671/LD5671.pdf</uicurlp></uicite>

<uicite><uicdisp>G. S. Solomon, J. A. Trezza, A. F. Marshall, and J. S.
Harris, Jr., Phys. Rev. Lett. 76, 952 (1996).</uicdisp><uicgrp><uiname>
Solomon, G. S. </uiname><uiname> Trezza, J. A. </uiname><uiname> Marshall,
A. F. </uiname><uiname> Harris, J. S.
</uiname></uicgrp><CODENM>PRLTAO</CODENM><uicser>Phys. Rev.
Lett.</uicser><uicinsp>A=Solomon&V=76&P=952&Y=1996</uicinsp><uicurls>http://
dli.grainger.uiuc.edu/~APS_PRL/76_6/LF5647/LF5647.sgm</uicurls><uicurlp>http
://dli.grainger.uiuc.edu/~APS_PRL/76_6/LF5647/LF5647.pdf</uicurlp></uicite>

<uicite><uicdisp>M. Pfister, M. B. Johnson, S. F. Alvarado, H. W. M.
Salemink, U. Marti, D. Martin, F. Morier-Genoud, and F. K. Reinhart, Appl.
Phys. Lett. 67, 1459 (1995).</uicdisp><uicgrp><uiname> Pfister, M.
</uiname><uiname> Johnson, M. B. </uiname><uiname> Alvarado, S. F.
</uiname><uiname> Salemink, H. W. M. </uiname><uiname> Marti, U.
</uiname><uiname> Martin, D. </uiname><uiname> Morier-Genoud, F.
</uiname><uiname> Reinhart, F. K.
</uiname></uicgrp><CODENM>APPLAB</CODENM><uicser>Appl. Phys.
Lett.</uicser><uicinsp>A=Pfister&V=67&P=1459&Y=1995</uicinsp><uicurls>http:/
/ushas.grainger.uiuc.edu/~aip/apl/67_10/031536/031536.sgm</uicurls><uicurlp>
http://ushas.grainger.uiuc.edu/~aip/apl/67_10/031536/031536ap.pdf</uicurlp><
/uicite>

<uift><uinoft>3</uinoft>

<uifigm><uifurl>http://ushas.grainger.uiuc.edu/~aip/apl/71_08/014734/fig1.jp
g</uifurl><uifcap>(600 A x 600 A) occupied states STM image of two 5-layer
columns of InAs quantum dots grown on GaAs.</uifcap></uifigm>

<uifigm><uifurl>http://ushas.grainger.uiuc.edu/~aip/apl/71_08/014734/fig2.jp
g</uifurl><uifcap>Simultaneously acquired (400 A x 400 A) STM images of a
5-layer dot column taken at sample bias of (a) -1.8 V and (b) +1.8
V.</uifcap></uifigm>

<uifigm><uifurl>http://ushas.grainger.uiuc.edu/~aip/apl/71_08/014734/fig3.jp
g</uifurl><uifcap>Occupied states STM images of a single 10-layer column of
InAs quantum dots taken at (a) (700 A x 700 A) and (b) (200 A x 200
A).</uifcap></uifigm>
</uift>
<uiblistf><uicitef><uicdispf>Pond, K., Nosho, B. Z., Stuber, H. R., et al.,
 "A two-dimensional ultrahigh vacuum positioner for scanning tunneling
microscopy ," Review of Scientific Instruments Vol. 69, no. 3 (March 1998):
1403 -
1405.</uicdispf><uicurlsf>http://ushas.grainger.uiuc.edu/~aip/rsi/69_03/0398
03/039803.sgm</uicurlsf><uicurlpf>http://ushas.grainger.uiuc.edu/~aip/rsi/69
_03/039803/039803rs.pdf</uicurlpf></uicitef>
<uicitef><uicdispf>Patane, A., Grassi Alessi, M., Intonti, F., et al.,
"Self-aggregated InAs quantum dots in GaAs ," Journal of Applied Physics
Vol. 83, no. 10 (15 May 1998): 5529 -
5535.</uicdispf><uicurlsf>http://ushas.grainger.uiuc.edu/~aip/jap/83_10/0468
10/046810.sgm</uicurlsf><uicurlpf>http://ushas.grainger.uiuc.edu/~aip/jap/83
_10/046810/046810ja.pdf</uicurlpf></uicitef>
<uicitef><uicdispf>Legrand, B., Grandidier, B., Nys, J. P., et al.,
"Scanning tunneling microscopy and scanning tunneling spectroscopy of
self-assembled InAs quantum dots ," Applied Physics Letters Vol. 73, no. 1
(6 July 1998): 96 -
98.</uicdispf><uicurlsf>http://ushas.grainger.uiuc.edu/~aip/apl/73_01/036827
/036827.sgm</uicurlsf><uicurlpf>http://ushas.grainger.uiuc.edu/~aip/apl/73_0
1/036827/036827ap.pdf</uicurlpf></uicitef>
</uiblistf>
</uimeta>
 
 
 
 

William H. Mischo
Grainger Engineering Library Information Center
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